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Teilenummer | GTC9926E |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | GTM | |
Logo | ||
Gesamt 4 Seiten www.DataSheet4U.com
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
GTC9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
4.6A
Description
The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 , VGS@10V
Continuous Drain Current3 , VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
VGS
ID @TA=25
ID @TA=70
IDM
PD @Ta=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
4.6
3.7
20
1
0.008
-55 ~ +150
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
GTC9926E
Page: 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GTC9926E Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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