Datenblatt-pdf.com


CCSTA14N40 Schematic ( PDF Datasheet ) - Solidtron

Teilenummer CCSTA14N40
Beschreibung N-Type ThinPak
Hersteller Solidtron
Logo Solidtron Logo 




Gesamt 4 Seiten
CCSTA14N40 Datasheet, Funktion
www.DataSheet4U.com
Description
This current controlled Solidtron (CCS) discharge switch is an n-
type Thyristor in a high performance ThinPakTM package. The
device gate is similar to that found on a traditional GTO
Thyristor.
The CCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
high di/dt capability. This semiconductor is intended to be a
solid state replcement for spark or gas type devices commonly
used in pulse power applications.
The ThinPakTM Package is a perforated, metalized ceramic
substrate attached to the silicon using 302oC solder. All
exterior metal surfaces are tinned with 63pb/37sn solder
providing the user with a circuit ready part. It's small size and
low profile make it extremely attractive for high di/dt
applications where stray series inductance must be kept to a
minimum.
CCSTA14N40
N-Type, ThinPakTM
Preliminary Data Sheet
Package
Gate contact
Cathode contacts
Anode
Bond Area on
bottom
Schematic Symbol
ThinPakTM
Anode (A)
Features
l 4000V Peak Off-State Voltage
l 7 kA Repetitive Ipk Capability
l 30 KA/uS di/dt Capability
l Low On-State Voltage
l Low trigger current
l Low Inductance Package
Absolute Maximum Ratings
Peak Off-State Voltage
Peak Reverse Voltage
Off-State Rate of Change of Voltage Immunity*
Continuous Anode Current at Tj = 125 oC
Repetitive Peak Anode Current (Pulse Width=10uSec)
Nonrepetitive Peak Anode Current (Pulse Width=10uSec)
Rate of Change of Current
Peak Gate Current (1 uS)
Max. Reverse Gate-Cathode Voltage
Maximum Junction Temperature
Maximum Soldering Temperature (Installation)
Gate (G)
Cathode (K)
SYMBOL
VDRM
VRRM
dv/dt
IA110
IASM
IASM
dI/dt
IGpk
VGR
TJM
VALUE
4
-5
1
100
10.0
14
30
100
-9
125
260
UNITS
kV
V
kV/uSec
A
kA
kA
kA/uSec
A
V
oC
oC
This SILICON POWER product is protected by one or more of the following U.S. Patents:
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
Preliminary Data Sheet - Product Status : First Production : This data sheet contains preliminary data . Supplementary data will be
published at a later date. Silicon Power reserves the right to make changes at any time without notice.
* Requires a 10 ohm gate to cathode shorting resistor.





SeitenGesamt 4 Seiten
PDF Download[ CCSTA14N40 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CCSTA14N40N-Type ThinPakSolidtron
Solidtron

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche