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PDF ECH8620 Data sheet ( Hoja de datos )
| Número de pieza | ECH8620 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENA0659
ECH8620
SANYO Semiconductors
DATA SHEET
ECH8620
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
• 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm)
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FN
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=0.5A, VGS=4V
N-channel
P-channel
100 --100
±20 ±20
2 --1.5
12 --12
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
100 V
1 µA
±10 µA
1.2 2.6 V
1.6 2.7
S
200 260 mΩ
230 325 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000523 No. A0659-1/6
1 page  
ECH8620
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
2
1000
7
5
3
2
SW Time -- ID
[Nch]
VDD=50V
VGS=10V
td(off)
tf
td(on)
tr
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7
Drain Current, ID -- A
IT10626
Ciss, Coss, Crss -- VDS [Nch]
f=1MHz
Ciss
100
7
5
Coss
Crss
3
2
10
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
10
VDS=50V
9 ID=2A
IT10627
[Nch]
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
3
2 IDP=12A
Total Gate Charge, Qg -- nC
ASO
IT10628
[Nch]
PW≤10µs
10
7
5
100µs
3 ID=2A
1ms
2
1.0
7
5
3
2
0.1
7
5
Operation in this
area is limited by
DC operation
RDS(on).
10ms
100ms
(Ta=25°C)
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
2
Drain-to-Source Voltage, VDS -- V IT10629
SW Time -- ID
[Pch]
1000
7 VDD= --50V
5 VGS= --10V
3
2
td(off)
100
7
5 tf
3
2
td(on)
10
7
5 tr
3
2
1.0
--0.01
2
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7
Drain Current, ID -- A
IT10615
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
1000
7
5
Ciss
3
2
100
7
5 Coss
Crss
3
2
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V
--10 VGS -- Qg
VDS= --50V
--9 ID= --1.5A
IT10616
[Pch]
--8
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Total Gate Charge, Qg -- nC
IT10617
ASO
[Pch]
3
2 IDP= --12A
PW≤10µs
--10
7
5
3
1m1s00µs
2
--1.0
7
5
3
2
--0.1
7
ID= --1.5A
Operation in this
area is limited by
RDDCS(oopner)a.tion1(0T0am=21s50°mCs)
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100
2
Drain-to-Source Voltage, VDS -- V IT10618
No. A0659-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ECH8620.PDF ] | |
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