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PDF ECH8609 Data sheet ( Hoja de datos )
| Número de pieza | ECH8609 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN0000
ECH8609
N-Channel and P-Channel Silicon MOSFETs
ECH8609
Ultrahigh-Speed Switching Applications
Preliminary
Features
• The ECH8609 incorporates an N-channel
MOSFET and a P-channel MOSFET that
feature low ON-resistance and high-speed
switching, thereby enabling hugh-density
mounting.
• 4V drive.
Package Dimensions
unit : mm
2206
[ECH8609]
0.3 0.15
5678
Specifications
Absolute Maximum Ratings at Ta=25°C
43 21
0.65
2.9
(Bottom view)
(Side view)
(Side view)
8765
12 34
0.65
(Top view)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Mounted on a ceramic board (900mm2✕0.8mm)
N-channel
P-channel
30 --30
±20 ±20
6 --4
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : FB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0102 TS IM SAITOU(M) No.0000-1/6
1 page  
ECH8609
Ciss, Coss, Crss -- VDS [Nch]
2
f=1MHz
1000
7
5
Ciss
3
2
100 Coss
7 Crss
5
3
2
0 5 10 15 20 25
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
10
VDS=10V
9 ID=6A
30
IT05607
[Nch]
8
Ciss, Coss, Crss -- VDS [Pch]
3
f=1MHz
2
1000
7
5
3
2
100
7
5
3
2
Ciss
Coss
Crss
10
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
--10
VDS= --10V
--9 ID= --4A
IT05608
[Pch]
--8
7 --7
6 --6
5 --5
4 --4
3 --3
2 --2
1
0
0 2 4 6 8 10 12
100
7
5
IDP=40A
Total Gate Charge, Qg -- nC
ASO
IT05609
[Nch]
<10µs
3
2
10
7
ID=6A
5
3
2
1.0
7
5
1ms
DC ope1r0at0imo1ns0ms
3 Operation in this
2 area is limited by RDS(on).
0.1
7
5
3
Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(900mm2✕0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
23 5
Drain-to-Source Voltage, VDS -- V IT05611
PD -- Ta
[Nch, Pch]
2.0
Mounted on a ceramic board(900mm2✕0.8mm)
1.8
--1
0
0 2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
ASO
--100
7
5
IDP= --40A
IT05610
[Pch]
<10µs
3
2
--10
1ms
7
5
ID= --4A
3
2
--1.0
7
5
3 Operation in this
DC
100m10sms
operation
2 area is limited by RDS(on).
--0.1
7
5
3
Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(900mm2✕0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT05612
1.6
1.4
1.2
1.0
0.8
Total
1unit
Dissipation
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05582
No.0000-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ECH8609.PDF ] | |
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