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Número de pieza | ECH8306 | |
Descripción | P-Channel Silicon MOSFET | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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Ordering number : ENA0302
ECH8306
SANYO Semiconductors
DATA SHEET
ECH8306
Features
• Low ON-resistance.
• 4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--100
±20
--2
--12
1.6
150
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Marking : JH
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--0.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--2A
VDS=--50V, VGS=--10V, ID=--2A
VDS=--50V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
min
--100
Ratings
typ
--1.2
2.9 4.9
170
195
1600
85
72
13.5
10
190
54
33
3.6
6.0
--0.8
max
--1
±10
--2.6
225
275
--1.2
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Unit
V
V
A
A
W
°C
°C
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12506PE MS IM TB-00001929 No. A0302-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ECH8306.PDF ] |
Número de pieza | Descripción | Fabricantes |
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ECH8305 | General-Purpose Switching Device | Sanyo Semicon Device |
ECH8306 | P-Channel Silicon MOSFET | Sanyo Semicon Device |
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