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PDF GS2N7002 Data sheet ( Hoja de datos )
| Número de pieza | GS2N7002 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Pb Free Plating Product
ISSUED DATE :2004/09/15
REVISED DATE :2006/01/17B
GS2N7002
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
Description
The GS2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
60V
4.5
500mA
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Operating Junction and Storage Temperature Range
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tp 50us)
Continuous Drain Current (1)
Pulsed Drain Current (2)
VDS
VGS
VGSM
ID
IDM
Power Dissipation
PD
Thermal Resistance ,Junction-to-Ambient
RthJA
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.8 1.10
0 0.10
0.8 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
-55 ~ +150
60
±20
±40
500
800
225
556
Unit
V
V
V
mA
mA
mW
/W
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
Static Drain-Source on-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance
GFS
Ciss
60
1
-
-
500
-
-
80
-
- - V VGS=0, ID=250uA
- 2.5 V VDS=2.5V, ID=0.25mA
- ±100 nA VGS=±20V, VDS=0
- 1 uA VDS=60V, VGS=0
- - mA VDS=7.5V, VGS=10V
-5
ID=50mA, VGS=5V
- 4.5
ID=500mA, VGS=10V
- - mS VDS>2 VDS(ON), ID=200mA
- 50 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
-
-
- 25 pF VDS=25V, VGS=0V, f=1MHz
- 5 pF
(1)The Power Dissipation of the package may result in a continuous train current.
(2)Pulse Width 300us, Duty cycle 2%.
GS2N7002
Page: 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GS2N7002.PDF ] | |
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