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PDF GE80N03 Data sheet ( Hoja de datos )
| Número de pieza | GE80N03 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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ISSUED DATE :2005/06/24
REVISED DATE :
GE80N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
8m
80A
Description
The GE80N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Low On-Resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
30
20
80
50
315
83.3
0.67
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.5
62
Unit
/W
/W
GE80N03
Page: 1/5
1 page  
ISSUED DATE :2005/06/24
REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE80N03
Page: 5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GE80N03.PDF ] | |
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