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PDF GBAS16 Data sheet ( Hoja de datos )
| Número de pieza | GBAS16 | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2002/10/28
REVISED DATE :2006/06/06C
GBAS16
SURFACE MOUNT, SWITCHING DIODE
VOLTAGE 85V, CURRENT 250mA
Description
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation(Note1)
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Symbol
Tj
Tstg
VR
VRRM
IO
IFM
IFSM
PD
Ratings
+150
-65 ~ +150
85
85
250
500
1000
350
Unit
V
V
mA
mA
mA
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
85
-
V IR=100uA
VF(1)
-
715 mV IF=1mA
Forward Voltage
VF(2)
-
855 mV IF=10mA
VF(3)
-
1000
mV IF=50mA
VF(4)
-
1250
mV IF=150mA
Reverse Current
IR - 1 uA VR=85V
Total Capacitance
CT
2 pF VR=0, f=1MHz
Reverse Recovery Time
Trr -
6 nS IF=IR=10mA, RL=100 measured at IR=1mA
GBAS16
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GBAS16.PDF ] | |
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