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Teilenummer | G494SD |
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Beschreibung | SCHOTTKY BARRIER DIODE | |
Hersteller | GTM | |
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Gesamt 2 Seiten www.DataSheet4U.com
G494SD
CORPORATION ISSUED DATE :2004/11/18
REVISED DATE :
S U R FAC E MO UNT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0.4A
Description
The G494SD is designed for low power rectification.
Feature
Two diode with serial
High reliability.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal(Note1)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-40 ~ +125
40
28
25
2.0
20
0.4
225
Unit
V
V
V
A
pF
A
mW
Electrical Characteristics (At Ta = 25 unless otherwise noted)
Characteristics
Symbol
Max.
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
VF(1)
VF(2)
IR
0.3
0.5
70
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 10.0 volts.
2. ESD sensitive product handling required.
Unit
V
V
uA
Test Condition
IF(1) = 10mA
IF(2) = 200mA
VR = 25V
1/2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ G494SD Schematic.PDF ] |
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