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PDF G2N4403 Data sheet ( Hoja de datos )
| Número de pieza | G2N4403 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
G2N4403
PNP EPITAXIAL PLANAR TANSISTOR
Description
The G2N4403 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4401
*High Power Dissipation: 625mW at 25
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
Characteristics at Ta = 25
PD
Symbol
Min.
BVCBO
-40
BVCEO
-40
BVEBO
-5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
-750
*VBE(sat)2
-
*hFE1
30
*hFE2
60
*hFE3
100
*hFE4
100
*hFE5
20
fT 200
Cob -
Classification OF hFE4
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-0.4
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
V
mV
mV
V
MHz
pF
Rank
Range
A
100-210
B
190-300
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-40
-40
-5
-600
625
Unit
V
V
V
mA
mW
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-35V, VBE= -0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-15mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IB=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
G2N4403
Page: 1/2
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