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Teilenummer | G1333 |
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Beschreibung | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | GTM | |
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Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :
G1333
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
800m
-550mA
Description
The G1333 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*Fast Switching Speed
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-550
-440
2.5
1.0
0.008
-55 ~ +150
Ratings
125
Unit
V
V
mA
mA
A
W
W/
Unit
/W
1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ G1333 Schematic.PDF ] |
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