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Teilenummer | GTT2602 |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | GTM | |
Logo | ||
Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2602
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
34m
6.3A
Description
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2602 is universally used for all commercial-industrial applications.
Features
*Capable of 2.5V gate drive
*Low on-resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
20
±12
6.3
5
30
2
0.016
-55 ~ +150
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GTT2602 Schematic.PDF ] |
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