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PDF GMBT2411 Data sheet ( Hoja de datos )
| Número de pieza | GMBT2411 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2006/09/14
REVISED DATE :
GM BT 2 4 11 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GMBT2411 is designed for medium power amplifier applications.
Features
ICMax.=500mA
Low VCE(sat). Optimal for low voltage operation.
Complementary to GMBT1036
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
40
32
5
500
225
Unit
V
V
V
mA
mW
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
40 -
BVCEO
32 -
BVEBO
5-
ICBO
--
IEBO
--
*VCE(sat)
--
*hFE
82 -
fT - 250
Cob - 6
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=100uA , IE=0
- V IC=1mA, IB=0
- V IE=100uA ,IC=0
1 uA VCB=20V, IE=0
1 uA VEB=4V, IC=0
400 mV IC=500mA, IB=50mA
390 VCE=3V, IC=100mA
- MHz VCE=5V, IE=-20mA, f=100MHz
- pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle
2%
Classification Of hFE
Rank
CP
Range
82 - 180
CQ
120 - 270
CR
180 - 390
GMBT2411
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GMBT2411.PDF ] | |
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