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Teilenummer | GP1S96J0000F |
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Beschreibung | Compact Transmissive Photointerrupter | |
Hersteller | Sharp Electrionic | |
Logo | ||
Gesamt 9 Seiten www.DataSheet4U.com
GP1S96J0000F
GP1S96J0000F
Gap : 1mm, Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
■ Description
GP1S96J0000F is a compact-package, phototransistor
output, transmissive photointerrupter, with opposing
emitter and detector in a molding that provides non-
contact sensing. The compact package series is a result
of unique technology combing transfer and injection
molding.
This device has a low profile.
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. Detection of object presence or motion.
2. Example : printer, lens control for camera
■ Features
1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Narrow Gap
3. Key Parameters :
• Gap Width : 1mm
• Slit Width (detector side): 0.3mm
• Package : 3.5×2.6×3.1mm
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No.: D3-A00801EN
1 Date Jun. 30. 2005
© SHARP Corporation
GP1S96J0000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 1.6mm or more from the top of elements.
(Example)
1.6mm or more
1.6mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polyphernylene
sulfide resin (UL94 V-0)
Lead frame
42Alloy
Maximum light emitting
wavelength (nm)
950
Lead frame plating
SnCu plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A00801EN
6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ GP1S96J0000F Schematic.PDF ] |
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