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Teilenummer | GSS9980 |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | GTM | |
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Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/16
REVISED DATE :
GSS9980
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
80V
52m
4.6A
Description
The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*High Breakdown Voltage
*Low Gate Change
*Single Drive Requirement
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
80
±20
4.6
2.9
30
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
62.5
Unit
/W
GSS9980
Page: 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GSS9980 Schematic.PDF ] |
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