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Teilenummer | GSS9926 |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | GTM | |
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Gesamt 4 Seiten www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/05/27
REVISED DATE :2006/11/15E
GSS9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
6A
Description
The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1
VGS
ID @Ta=25
ID @Ta=70
IDM
Power Dissipation
Linear Derating Factor
PD @Ta=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±8
6
4.8
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Unit
/W
GSS9926
Page: 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GSS9926 Schematic.PDF ] |
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