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Teilenummer | RJK6014DPP |
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Beschreibung | Silicon N Channel MOS FET High Speed Power Switching | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 4 Seiten www.DataSheet4U.com
RJK6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
IDNote4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
REJ03G1531-0100
Rev.1.00
Apr 17, 2007
D
1. Gate
2. Drain
3. Source
S
Ratings
600
±30
16
32
16
32
4
0.87
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1531-0100 Rev.1.00 Apr 17, 2007
Page 1 of 3
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RJK6014DPP Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RJK6014DPK | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
RJK6014DPP | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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