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PDF RJK1525DPS Data sheet ( Hoja de datos )
| Número de pieza | RJK1525DPS | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK1525DPS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220CFM)
123
G
D
S
REJ03G1314-0200
Rev.2.00
Feb 08, 2007
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
17
50
17
50
17
21.6
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Feb 08, 2007 page 1 of 6
1 page  
RJK1525DPS
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10 10 V
5V
VGS = 0 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4
ID = 10 mA
1 mA
3
2 0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.3 0.5
0.2
0.1
0.1
0.03
0.01
0.003
0.05
0.02
0.01
1shot pulse
0.001
10 µ
100 µ
1m
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 75 V
Waveform
90%
Vin 10%
Vout 10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.2.00 Feb 08, 2007 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK1525DPS.PDF ] | |
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