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GSMBTA44 Schematic ( PDF Datasheet ) - GTM

Teilenummer GSMBTA44
Beschreibung TRANSISTOR
Hersteller GTM
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Gesamt 2 Seiten
GSMBTA44 Datasheet, Funktion
www.DataSheet4U.com
G S M B TA4 4
ISSUED DATE :2005/08/31
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBTA44 is designed for application requires high voltage.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
500
400
6
300
350
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
500 -
BVCEO
400 -
BVEBO
6-
ICBO
--
IEBO
--
ICES
--
*VCE(sat)1
--
*VCE(sat)2
--
*VBE(sat)
--
*hFE1
40 -
*hFE2
40 -
*hFE3
45 -
*hFE4
40 -
Cob - 4
,unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=10uA, IC=0
100 nA VCB=400V, IE=0
100 nA VEB=4V, IC=0
500 nA VCE=400V, IB=0
375 mV IC=20mA, IB=2mA
750 mV IC=50mA, IB=5mA
750 mV IC=10mA, IB=1mA
- VCE=10V, IC=1mA
- VCE=10V, IC=10mA
- VCE=10V, IC=50mA
- VCE=10V, IC=100mA
6 pF VCB=20V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GSMBTA44
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