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Teilenummer | GSMBT5401 |
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Beschreibung | TRANSISTOR | |
Hersteller | GTM | |
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Gesamt 2 Seiten www.DataSheet4U.com
ISSUED DATE :2005/08/31
REVISED DATE :
GSMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage.
Features
High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)
Complementary to GSMBT5551
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min. Typ. Max.
BVCBO
BVCEO
-160
-150
-
-
-
-
BVEBO
ICBO
-5 -
-
- - -50
*VCE(sat)1
- - -200
*VCE(sat)2
- - -500
*VBE(sat)1
*VBE(sat)2
- - -1
- - -1
*hFE1
*hFE2
50 -
-
60 - 240
*hFE3
50 -
-
fT 100 - 300
Cob - - 6
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
-160
-150
-5
-600
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-10uA ,IC=0
VCB=-120V, IE=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GSMBT5401
Page: 1/2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ GSMBT5401 Schematic.PDF ] |
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