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Teilenummer | GSMBT5089 |
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Beschreibung | TRANSISTOR | |
Hersteller | GTM | |
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Gesamt 2 Seiten www.DataSheet4U.com
ISSUED DATE :2005/08/31
REVISED DATE :
GSMBT5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25 )
Symbol
BVCBO
BVCEO
BVEBO
Min. Typ. Max.
30 -
-
25 -
-
4.5 -
-
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
- - 50
- - 100
- - 500
- - 800
400 - 1200
450 -
-
400 -
-
50 -
-
Cob - - 4.0
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
30
25
4.5
50
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=15V, IE=0
VEB=4.5V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
1/2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ GSMBT5089 Schematic.PDF ] |
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