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PDF GSMBD2004 Data sheet ( Hoja de datos )
| Número de pieza | GSMBD2004 | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | GTM | |
| Logotipo |  |
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GSMBD2004
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 300V, CURRENT 0. 225A
Description
The GSMBD2004 is designed for ultra high speed switching.
Package Dimensions
ISSUED DATE :2005/12/23
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
Absolute Maximum Ratings (At TA = 25
Parameter
Repetitive Peak Reverse Voltage
Continuous reverse voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp=1.0s
Typical Junction Capacitance between Terminal (Note1)
Max. Reverse Recovery Time (Note2)
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operation and Storage Temperature Range
unless otherwise specified)
Symbol
Ratings
VRRM
300
VR(VRW M)
240
VR(RMS)
170
IFM 225
IFSM
4
1
CJ 5.0
TRR 50
PD 350
R JA
357
TJ, TSTG
-65 ~ +150
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Unit
V
V
V
mA
A
pF
nSec
mW
/W
Electrical Characteristics (At TA = 25 unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
BVR
300
-
V IR=100uA
0.85
V IF=20mA
Forward Voltage
VF - 1 V IF=100mA
- 1.25 V IF=225mA
Reverse Current
IR - 100 nA VR=240V, TA=25
100 uA VR=240V, TA=150
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100
3. ESD sensitive product handling required.
and recovery to IRR=-3mA.
GSMBD2004
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GSMBD2004.PDF ] | |
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