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GSD882S Schematic ( PDF Datasheet ) - GTM

Teilenummer GSD882S
Beschreibung NPN EPITAXIAL PLANAR TRANSISTOR
Hersteller GTM
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Gesamt 2 Seiten
GSD882S Datasheet, Funktion
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSD882S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Characteristics at Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
FT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Classification Of hFE2
Rank
Q
Range
100-200
P
160-320
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
40
30
5.0
3.0
750
Unit
V
V
V
A
mW
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=100uA ,IE=0
IC=1mA,IB=0
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle
2%
E
250-500
1/2





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