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PDF GSC945 Data sheet ( Hoja de datos )
| Número de pieza | GSC945 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2005/06/14
REVISED DATE :
GSC945
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.
Features
Collector-Emitter Voltage BVCBO=50V
Collector current up to 150mA
High hFE linearity
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
60
50
5
150
50
250
125
-55 ~ +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
50 -
BVEBO
5-
ICBO
IEBO
--
--
VCE(sat)
- 0.1
hFE 90 -
fT 100 190
Cob - 2.0
NF - 4.0
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=1uA, IC=0
100 nA VCB=40V
100 nA VEB=3V
0.3 V IC=100mA, IB=10mA
600 VCE=6V, IC=1mA
-
MHz
VCE=10V, IC=50mA
3.0 pF VCB=10V, IE=0, f=1MHz
6.0 dB IC=0.1mA , VCE=6V, RG=10k , f=100HZ
Classification Of hFE
Rank
R
Range
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GSC945.PDF ] | |
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