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PDF GL194 Data sheet ( Hoja de datos )
| Número de pieza | GL194 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GL194
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GL194 is designed for medium power amplifier applications.
Features
60 Volt VCEO
1 Amp continuous current
Complementary to GL195
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
80
60
5
1
2
200
2
Unit
V
V
V
A
A
mA
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
80 -
*BVCEO
60 -
BVEBO
5-
ICBO
--
ICES
--
IEBO
--
*VCE(sat)1
--
*VCE(sat)2
--
*VBE(sat)
--
*VBE(on)
--
*hFE1
100 -
*hFE2
100 -
*hFE3
80 -
*hFE4
30 -
fT 150 -
Cob - -
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=100uA , IE=0
- V IC=10mA, IB=0
- V IE=100uA ,IC=0
100 nA VCB=60V, IE=0
100 nA VCES=60V
100 nA VEB=4V, IC=0
0.25
V IC=500mA, IB=50mA
0.5 V IC=1A, IB=100mA
1.1 V IC=1A, IB=100mA
1.0 V VCE=5V, IC=1A
VCE=5V, IC=1mA
300 VCE=5V, IC=500mA
VCE=5V, IC=1A
VCE=5V, IC=2A
- MHz VCE=10V, IC=50mA, f=100MHz
10 pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GL194
Page: 1/2
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| PDF Descargar | [ Datasheet GL194.PDF ] | |
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