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GJ75N03 Schematic ( PDF Datasheet ) - GTM

Teilenummer GJ75N03
Beschreibung N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller GTM
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Gesamt 4 Seiten
GJ75N03 Datasheet, Funktion
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ75N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
4.5m
75A
Description
The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
EAS
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
75
62.5
350
96
0.75
400
40
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
1.3
110
Unit
/W
/W
GJ75N03
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