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GJ31C Schematic ( PDF Datasheet ) - GTM

Teilenummer GJ31C
Beschreibung NPN EPITAXIAL PLANAR TRANSISTOR
Hersteller GTM
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Gesamt 2 Seiten
GJ31C Datasheet, Funktion
www.DataSheet4U.com
GJ31C
ISSUED DATE :2005/05/12
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ31C is designed for use in general purpose amplifier and switching applications.
Features
*Complementary to GJ32C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
100
Collector to Emitter Voltage
VCEO
100
Emitter to Base Voltage
VEBO
5
Collector Current (DC)
IC 3
Collector Current (Pulse)
IC 5
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
2
15
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
100 -
-
BVCEO
100 -
-
BVEBO
5- -
ICES
- - 20
ICEO
- - 50
IEBO
- -1
*VCE(sat)
- - 1.2
*VBE(on)
- - 1.8
*hFE1
25 -
-
*hFE2
10 - 50
fT 3 - -
Unit
V
V
V
uA
uA
mA
V
V
MHz
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
IE=100uA, IC=0
VCE=100V, VEB=0V
VCE=60V, IB=0
VEB=5V, IC=0
IC =3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ31C
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