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GISD1804 Schematic ( PDF Datasheet ) - GTM

Teilenummer GISD1804
Beschreibung NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Hersteller GTM
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Gesamt 3 Seiten
GISD1804 Datasheet, Funktion
www.DataSheet4U.com
ISSUED DATE :2005/01/13
REVISED DATE :
GISD1804
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
*Low collector-to-emitter saturation voltage
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
8
Collector Current(Pulse)
IC
12
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.2
VBE(sat)
- 0.95
hFE1
70 -
hFE2
35 -
fT - 180
tstg - 500
tf - 20
Cob - 65
unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 uA VCB=40V, IE=0
1 uA VEB=4V, IC=0
0.4 V IC=4A, IB=0.2A
1.3 V IC=4A, IB=0.2A
400 VCE=2V, IC=0.5A
- VCE=2V, IC=6A
-
MHZ
VCE=5V,IC=1A
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
GISD1804
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