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GI9435 Schematic ( PDF Datasheet ) - GTM

Teilenummer GI9435
Beschreibung P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller GTM
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Gesamt 4 Seiten
GI9435 Datasheet, Funktion
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/23
REVISED DATE :
GI9435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
50m
-20A
Description
The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-251 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-20
-13
-72
31
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
4.0
110
Unit
/W
/W
GI9435
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