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PDF RF5222 Data sheet ( Hoja de datos )
| Número de pieza | RF5222 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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RF5222
3.0V TO 4.2V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
87
Features
Single Power Supply 3.0V to
4.2 V
26dB Minimum Gain, Input
Matched to 50Ω
2.4GHz to 2.5GHz Frequency
Range
11g POUT=+17dBm@3% Typ
EVM, 125mA
Applications
IEEE802.11b/g/n WLAN
Applications
2.5GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
RF IN 1
Input
Match
VREG 2
3
Interstage
Match
Bias Circuit
6 VC2
2Fo
Filter
Power
Detector
5 RF OUT
4
Functional Block Diagram
Product Description
The RF5222 is a linear, medium-power, high-efficiency, two-stage ampli-
fier IC designed specifically for battery-powered WLAN applications such
as PC cards, mini PCI, and compact flash applications. The device is man-
ufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use as the final RF
amplifier in 2.5GHz OFDM and other spread-spectrum transmitters. The
device is provided in a 2.2mmx2.2mm, 8-pin, QFN with a backside
ground. The RF5222 is designed to maintain linearity over a wide range of
supply voltage and power output. The RF5222 also has built-in power
detector and incorporates the input and interstage matching components
internally which reduces the component count used externally and makes
it easier to incorporate on any design.
Ordering Information
RF5222
3.0V to 4.2V, 2.4GHz to 2.5GHz Linear Power Amplifier
RF5222PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
9GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS070717
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
1 page  
RF5222
Theory of Operation and Application Information
The RF5222 is a two-stage power amplifier (PA) with a minimum gain of 26dB in the 2.4GHz to 2.5GHz ISM band. The RF5222
has integrated input and interstage matching components thus allowing minimal bill of materal (BOM) parts count in end appli-
cations. The RF5222 is designed primarily for IEEE802.11b/g/n WLAN applications where the available supply voltage and
current are limited. This amplifier will operate to (and below) the lowest expected voltage made available by a typical PCMCIA
slot in a laptop PC, and will maintain required linearity at decreased supply voltages. The device is provided in a
2.2mmx2.2mmx0.45mm, 8-pin, QFN with backside ground.
The RF5222 requires only a single positive supply of 3.3V nominal to operate to full specifications. Power control is provided
through one bias voltage pin (VREG). The input DC blocking cap is provided internally and the evaluation board circuit (available
from RFMD, Inc. (RFMD)) is optimized for 3.3VDC applications. For best performance, it is important to duplicate (as closely as
possible) the layout of the evaluation board. The RF5222 has primarily been characterized with a voltage on VREG of 3.1VDC. If
you prefer to use a bias voltage that is significantly different than 3.1VDC, or a different frequency than the recommended fre-
quency range, contact RFMD Sales or Application Engineering for additional data and guidance.
There is no required matching on the RF5222 input or interstage circuits. Only the RF5222 output stage requires matching
allowing the RF5222 to be implemented in applications requiring the fewest end product bill of materials (BOM) parts count
and lowest BOM cost. In most cases, the capacitor used as part of the RF5222 output matching circuit is also employed to
accomplish DC-blocking. The RF5222PCBA evaluation board (available from RF Micro Devices, Inc. (RFMD)) is optimized for
3.3VDC supply input.
For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground
layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is
copied from the RF5222 evaluation board. Gerber files of RFMD PCBA designs can be provided on request. The RF5222 is a
very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to
operate at 2.5GHz. The RF5222 evaluation board layout and schematic are available using 0201 (US) size components which
will help shrink the overall size of the total area of the PA and components of the intended design. Please contact RFMD Sales
or Application Engineering for additional data and guidance.
Rev A0 DS070717
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
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| PDF Descargar | [ Datasheet RF5222.PDF ] | |
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