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RF5110G Schematic ( PDF Datasheet ) - RF Micro Devices

Teilenummer RF5110G
Beschreibung 3V GSM POWER AMPLIFIER
Hersteller RF Micro Devices
Logo RF Micro Devices Logo 




Gesamt 18 Seiten
RF5110G Datasheet, Funktion
www.DataSheet4U.com
0
RoHS & Pb-Free Product
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
RF5110G
3V GSM POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• FM Radio Applications: 150MHz/220MHz/
450 MHz/865 MHz/915 MHz
Product Description
The RF5110G is a high-power, high-efficiency power
amplifier module offering high performance in GSM OR
GPRS applications. The device is manufactured on an
advanced GaAs HBT process, and has been designed for
use as the final RF amplifier in GSM hand-held digital cel-
lular equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF5110G can be used
together with the RF5111 for dual-band operation. The
device is packaged in an ultra-small 3mmx3mmx1mm
plastic package, minimizing the required board space.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
VCC1 1
12 RF OUT
GND1 2
11 RF OUT
RF IN 3
10 RF OUT
GND2 4
9 RF OUT
5678
-A-
3.00 SQ.
0.15 C A
2 PLCS
1.50 TYP
2 PLCS
0.15 C B
1.00
0.85
0.80
0.65
0.05 C
0.05
0.01
2 PLCS
0.15 C B
-B-
1.37 TYP
12°
MAX
2 PLCS
0.15 C A
2.75 SQ.
Shaded lead is pin 1.
0.60
0.24
TYP
Dimensions in mm.
0.10 M C A B
0.30
0.18
-C-
0.45
0.00
4 PLCS
11..6355SQ.
0.23
0.13
4 PLCS
0.50
0.55
0.30
SEATING
PLANE
Package Style: QFN, 16-Pin, 3x3
Features
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 57% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
Ordering Information
RF5110G
3V GSM Power Amplifier
RF5110GPCBA-410Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 060814
2-1






RF5110G Datasheet, Funktion
RF5110G
VCC1
5Ω
RF IN
APC1
1.0 kΩ
5Ω
Internal Schematic
VCC2
4.5 pF
APC1
400 Ω
VCC
APC2
300 Ω
RF OUT
VCC
PKG BASE
GND2
PKG BASE
2-6 Rev A3 060814

6 Page









RF5110G pdf, datenblatt
RF5110G
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”; Board Material FR-4; Multi-Layer
2-12
Rev A3 060814

12 Page





SeitenGesamt 18 Seiten
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