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Teilenummer | RF3159 |
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Beschreibung | QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE | |
Hersteller | RF Micro Devices | |
Logo | ||
Gesamt 26 Seiten www.DataSheet4U.com
RF3159
QUAD-BAND GSM/EDGE/GSM850/EGSM900
/DCS/PCS/POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Package Style: Module (6mmx6mm)
HB RFIN 1
18 HB RFOUT
Features
High Gain for use in Systems
with Low RF Driver Power
Linear EDGE and GSM Opera-
tion
PowerStar® GSM/GPRS
Power Control
Digital Band Select Enables
GSM850, EGSM900 or DCS,
PCS Amplifier Lineup
Single Supply Voltage;
Requires no External Refer-
ence Voltage
Automatic VBATT Tracking Cir-
cuit avoids Switching Tran-
sients at Low Supply Voltage
Low Power Mode for Reduced
EDGE Current
Digital Bias Control for Simple
Implementation of Low Power
Mode
Compact 6mmx6mm Pack-
age
Applications
Quad-Band GSM/EDGE
Handsets
GSM/EDGE Transmitter Line-
ups
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/
PCS Products
GPRS Class 12 Compatible
Products
Mobile EDGE/GPRS Data
Products
BAND SEL 2
TX EN 3
VBATT 4
VMODE 5
VRAMP 6
LB RFIN 7
8
Integrated Power
Control
12 LB RFOUT
Functional Block Diagram
Product Description
The RF3159 is a high power, dual-mode amplifier module with integrated
power control. The input and output terminals are internally matched to
50Ω. The amplifier devices are manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is
designed to operate either in saturated mode for GMSK signaling or linear
mode for 8PSK signaling. The module is designed to be the final amplifica-
tion stage in a dual-mode GSM/EDGE mobile transmit lineup operating in
the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands
(such as a cellular handset). Band selection is controlled by an input on
the module which selects either the low or high band. The device is pack-
aged on a 6mmx6mm laminate module with a protective plastic over-
mold.
Ordering Information
RF3159 Quad-Band GSM/EDGE/GSM850/EGSM900RF3159Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module
/DCS/PCS/Power Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
RF3159PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
9GaAs pHEMT
Si CMOS
GaN HEMT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS070102
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 26
RF3159
Parameter
Specification
Min. Typ. Max.
EGSM 900MHz Band
8PSK Mode
Operating Frequency Range
Maximum Output Power
Meeting EVM and
ACPR Spectrum
Gain, High Power Mode
Gain, Low Power Mode
EVM RMS
ACPR and Spectrum Mask
ACPR and Spectrum Mask,
Extreme Conditions
Output Noise Power
880
28.5
13.5
26.0
31.0
26.0
2f0 Harmonics
3f0 Harmonics
Fundamental Cross Band Coupling
2f0, 3f0 Cross Band Coupling
All Other Non-harmonic Spurious
Input VSWR
Output Load VSWR Stability
Note: Rated POUT=28.5dBm
20.0
27.0
33.5
30.5
2.5
-80
-83
-15
-25
-10
-20
5:1
915
36.0
36.0
5.0
5.0
-56
-63
-56
-63
-77
-80
-7
-10
-36
2.5:1
Unit
MHz
dBm
Condition
Nominal Conditions (unless otherwise stated):
Input and Output=50Ω, Temp=25 °C,
VCC=3.6V, VMODE=”High”, VBIAS=“High”,
Freq=880MHz to 915MHz, 25% Duty Cycle,
Pulse Width=1154μs, BAND_SEL=“Low”,
TX_EN = “High”
dBm
dBm
dB
dB
%
%
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBm
dBm
dBm
VBIAS = Low
Temp=-20°C to +85°C, VCC=3.2V
POUT=Rated POUT
POUT=13.5dBm, VBIAS=Low
POUT<Rated POUT
POUT<26.0dBm, VCC=3.2V to 4.5V,
Temp=-20°C to +85°C
At 400kHz in 30kHz BW, POUT<Rated POUT
At 600kHz in 30kHz BW, POUT<Rated POUT
At 400kHz in 30kHz RBW. POUT<26dBm,
VCC=3.2V to 4.5V, Temp=-20°C to +85°C.
At 600kHz in 30kHz RBW. POUT<26dBm,
VCC=3.2V to 4.5V, Temp=-20°C to +85°C.
RBW=100kHz, 925MHz to 935MHz,
f0=915MHz, POUT<Rated POUT
RBW=100kHz, 935MHz to 960MHz,
f0=915MHz, POUT<Rated POUT
POUT<Rated POUT
POUT<Rated POUT
Measured at HB_RFOUT pin,
POUT<Rated POUT at LB_RFOUT pin.
Measured at HB_RFOUT pin,
POUT<Rated POUT at LB_RFOUT pin.
POUT<Rated POUT
POUT<Rated POUT
Spurious<-36dBm, POUT< Rated POUT into
50Ω load, RBW=3MHz
6 of 26
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A0 DS070102
6 Page RF3159
Pin Out
HB RF IN 1 22
Band Select 2
TX Enable 3
VBATT 4
Mode Select 5
Ramp Signal 6
LB RF IN 7
8
21 20 19 18 HB RF OUT
17 GND
16 GND
23
GND
15 GND
14 GND
13 GND
9 10 11 12 LB RF OUT
Note: view from top of part.
Package Drawing
1.40
1.25
6.00
± 0.10
6.00
± 0.10
0.440
± 0.050
5.900 TYP
5.325 TYP
5.000 TYP
4.200 TYP
3.325
2.675
2.200 TYP
1.400 TYP
0.675 TYP
0.600 TYP
0.000
5.400 TYP
5.325 TYP
5.100 TYP
4.600 TYP
3.800 TYP
3.400
2.600
1.800 TYP
1.000 TYP
0.900 TYP
0.100 TYP
Note: viewed from bottom of the part.
Shaded area represents pin 1.
Dimensions in mm.
12 of 26
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A0 DS070102
12 Page | ||
Seiten | Gesamt 26 Seiten | |
PDF Download | [ RF3159 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RF3158 | QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE | RF Micro Devices |
RF3159 | QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE | RF Micro Devices |
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