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PDF RF3158 Data sheet ( Hoja de datos )
| Número de pieza | RF3158 | |
| Descripción | QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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RF3158
QUAD-BAND GSM/EDGE/GSM850/EGSM900
/DCS/PCS POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Package Style: Module (6mmx6mm)
Features
Linear EDGE and GSM Opera-
tion
PowerStar® GSM/GPRS
Power Control
Digital Band Select Enables a
Single PA Lineup
Single Supply Voltage;
Requires no External Refer-
ence Voltage
Automatic VBATT Tracking Cir-
cuit avoids Switching Tran-
sients at Low Supply Voltage
Low Power Mode for Reduced
EDGE Current
Analog Bias Control allows
External Optimization of
EDGE Current
Compact 6mmx6mm Pack-
age
Applications
Quad-Band GSM/EDGE
Handsets
GSM/EDGE Transmitter Line-
ups
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/
PCS Products
GPRS Class 12 Compatible
Products
Mobile EDGE/GPRS Data
Products
HB RFIN 1
BAND SEL 2
TX EN 3
VBATT 4
VMODE 5
VRAMP 6
LB RFIN 7
Integrated Power
Control
18 HB RFOUT
12 LB RFOUT
Functional Block Diagram
Product Description
The RF3158 is a high power, dual-mode amplifier module with integrated
power control. The input and output terminals are internally matched to
50Ω. The amplifier devices are manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is
designed to operate either in saturated mode for GMSK signaling or linear
mode for 8PSK signaling. The module is designed to be the final amplifica-
tion stage in a dual-mode GSM/EDGE mobile transmit lineup operating in
the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands
(such as a cellular handset). Band selection is controlled by an input on
the module which selects either the low or high band. The device is pack-
aged on a 6mmx6mm laminate module with a protective plastic over-
mold.
Ordering Information
RF3158
RF3158PCBA-41X
Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS
Power Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
9GaAs pHEMT
Si CMOS
GaN HEMT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 26
1 page  
RF3158
Parameter
Specification
Min. Typ. Max.
EGSM 900MHz Band
GMSK Mode
Operating Frequency Range
Input Power Range, PIN
Maximum Output Power
Power Droop
Power Control Slope
Total Efficiency (PAE)
Output Noise Power
880
+1.0
34.5
32.5
-0.25
47
Forward Isolation
2f0 Harmonics
3f0 Harmonics
Fundamental Cross Band Coupling
2f0, 3f0 Cross Band Coupling
All Other Non-harmonic Spurious
Input VSWR
Output Load VSWR Stability
6:1
+4.0
35
300
200
60
50
-83
-87
915
+6.5
-10
0.25
-80
-83
-25
-7
-10
0
-18
-36
2.5:1
Output Load VSWR Ruggedness
10:1
Note: VRAMP,MAX=2.1V
Unit
MHz
dBm
dBm
dBm
dBm
dB
dB/V
dB/V
dB/V
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Condition
Nominal Conditions (unless otherwise stated):
Input and Output=50Ω, Temp=25 °C,
VCC=3.6V, VMODE=”Low”, Freq=880MHz to
915MHz, 25% Duty Cycle, Pulse
Width=1154μs, Over Pin Range,
BAND_SEL=“Low”, TX_EN=“High”
Temp=25°C, VCC=3.6V, VRAMP=VRAMP,MAX
Temp=+85oC, VCC=3.2V, VRAMP=VRAMP,MAX
VRAMP = 0.3 V
POUT<34.5dBm, 50% Duty Cycle, Pulse
Width = 2308 μs
Maximum Slope, POUT=0dBm to 5dBm
Maximum Slope, POUT=5dBm to 15dBm
Maximum Slope, POUT>15dBm
VRAMP= VRAMP,MAX
RBW=100kHz, 925MHz to 935MHz,
f0=915MHz, POUT<+34.5dBm
RBW=100kHz, 935MHz to 960MHz,
f0=915MHz, POUT<+34.5dBm
TX_EN=0V, VRAMP=0.3V, PIN=+6dBm
POUT < 34.5 dBm
POUT < 34.5 dBm
Measured at HB_RFOUT pin, POUT=34.5dBm at
LB_RFOUT pin.
Measured at HB_RFOUT pin, POUT=34.5dBm at
LB_RFOUT pin.
POUT < 34.5 dBm
Over POUT Range
Spurious<-36dBm, RBW=3MHz, PIN=+4dBm,
set VRAMP where POUT<34.5dBm into 50Ω
load
Set VRAMP where POUT<34.5dBm into 50 Ω
load, no damage or permanent degradation to
part.
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 26
5 Page 
RF3158
Pin Function Description
Interface Schematic
1 HB_RFIN RF input to the high-band PA. There is a 100Ω shunt resistor, before the
HB_RFIN RF3158 PAM
DC block inside the part, which sets the input impedance for the HB PA.
External
When connected to a DC coupled transceiver, an external DC blocking
DC Block
DC Block
capacitor is required.
100 Ω
2
BAND_SEL
Digital input enables either the low band or high band amplifier die within
the module. A logic low selects Low Band (GSM850/EGSM900), a logic
BAND SEL
high selects High Band (DCS1800/PCS1900). This pin is a high impedance
TX EN
CMOS input with no pull-up or pull-down resistors.
GSM CTRL
DCS CTRL
3
TX_EN
Digital input enables or disables the internal circuitry. When disabled, the
module is in the OFF state and draws virtually zero current. This pin is a
high impedance CMOS input with no pull-up or pull-down resistors.
VBATT
TX EN
TX ON
4
VBATT
Main DC power supply for all circuitry in the RF3158. Traces to this pin will
have high current pulses during operation so proper decoupling and rout-
ing to handle this should be observed.
5
VMODE
Digital input which internally adjusts settings to optimize amplifier perfor-
mance for saturated or linear mode. A logic low selects saturated mode for
GMSK modulation. A logic high selects linear mode for 8PSK modulation.
This pin is a high impedance CMOS input with no pull-up or pull-down resis-
tors.
6
VRAMP
In GMSK mode, the voltage on this pin controls the output power by varying
the regulated collector voltage on the amplifiers. In EDGE mode, the volt-
300 kHz
age on this pin varies the regulated base bias of the amplifiers. An internal
VRAMP
300kHz filter reduces switching ORFS resulting from transitions between
DAC steps. Most systems will have no need for external VRAMP filtering. This
pin provides an impedance of approximately 60kΩ.
7 LB_RFIN RF input to the low-band PA. It is DC-blocked within the part.
DC Block
LB_RFIN
8
GND
Ground.
10
GND
Ground.
11
GND
Ground.
12 LB_RFOUT RF output from the low-band PA. It is DC-blocked within the part.
RF3158 PAM
DC Block
LB_RFOUT
13
GND
Ground.
14
GND
Ground.
15
GND
Ground.
16
GND
Ground.
17
GND
Ground.
18 HB_RFOUT RF output from the high-band PA. It is DC-blocked within the part.
RF3158 PAM
DC Block
HB_RFOUT
19
GND
Ground.
RF3158 PAM
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 26
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet RF3158.PDF ] | |
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