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G4PC50UD Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer G4PC50UD
Beschreibung IRG4PC50UD
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
G4PC50UD Datasheet, Funktion
www.DataSheet4U.com
PD 91471B
IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
www.irf.com
1
12/30/00






G4PC50UD Datasheet, Funktion
www.DataSheet4U.com
IRG4PC50UD
8.0
R G = 5.0
T J = 150°C
V CC = 480V
V GE = 15V
6.0
4.0
2.0
1000
VGGE E= 2 0V
TJ = 125°C
100 SAFE OPERATING AREA
10
0.0 A
0 10 20 30 40 50 60
IC , Collector-to-Em itter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
TJ = 1 50 °C
TJ = 1 25 °C
10 TJ = 25 °C
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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