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DMBTA55 Schematic ( PDF Datasheet ) - Dc Components

Teilenummer DMBTA55
Beschreibung TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Hersteller Dc Components
Logo Dc Components Logo 




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DMBTA55 Datasheet, Funktion
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBTA55
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-60
-60
-4
-500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
SOT-23
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.0043(0.11)
.0035(0.09)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -60
Collector-Emitter Breakdown Voltage
BVCEO -60
Emitter-Base Breakdown Volatge
BVEBO
-4
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
ICBO
ICEO
VCE(sat)
-
-
-
Base-Emitter On Voltage
VBE(on)
-
DC Current Gain(1)
hFE1
hFE2
80
80
Transition Frequency
fT 50
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-100
-100
-0.25
-1.2
250
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
IC=-100µA
IC=-1mA
IE=-100µA
VCB=-60V
VCE=-50V
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, VCE=-1V





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