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Teilenummer | DMBT3904 |
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Beschreibung | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
Hersteller | Dc Components | |
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Gesamt 1 Seiten www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT3904
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC 200
Total Power Dissipation
PD 225
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
60
40
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
Collector Cutoff Current
ICEX
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)1
VCE(sat)2
-
-
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
hFE1
650
-
40
-
-
-
DC Current Gain(1)
hFE2
hFE3
hFE4
70
100
60
-
-
-
hFE5
30
-
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
fT
Cob
380µs, Duty Cycle
300
-
2%
-
-
Max
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
-
-
-
-
-
MHz
pF
Test Conditions
IC=10µA
IC=1mA
IE=10µA
VCE=30V, VBE= 3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=20V, f=100MHz
VCB=5V, f=1MHz, IE=0
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ DMBT3904 Schematic.PDF ] |
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