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PDF DMBT2369 Data sheet ( Hoja de datos )
| Número de pieza | DMBT2369 | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT2369
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
Rating
40
40
4.5
500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
40
-
- V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCES
40
-
- V IC=10µA, IB=0
Collector-Emitter Breakdown Voltage
BVCEO
15
-
- V IC=10mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO 4.5
-
- V IE=10µA, IC=0
Collector Cutoff Current
ICBO
-
- 400 nA VCB=20V, IE=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
- 250 mV IC=10mA, IB=1mA
Base-Emitter Saturation Voltage(1)
VBE(sat) 700 - 850 mV IC=10mA, IB=1mA
DC Current Gain(1)
hFE1
hFE2
40
20
- 120 - IC=10mA, VCE=1V
- - - IC=100mA, VCE=2V
Output Capacitance
Cob - - 4 pF VCB=5V, f=1MHz, IE=0
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet DMBT2369.PDF ] | |
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