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DCR506-8 Schematic ( Datenblatt PDF ) - Dc Components

Teilenummer DCR506-8
Beschreibung (DCR506-3 - DCR506-8) TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Hersteller Dc Components
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DCR506-8 Datasheet, Funktion
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DCR506-3
THRU
DCR506-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 6.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating Unit
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR506-3
DCR506-4
DCR506-6
DCR506-8
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current
(TA=57oC, 180o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
IT(RMS)
ITSM
6.0
40
A
A
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
IGM
PGM
PG(AV)
TJ
TSTG
1.0
0.5
0.1
-40 to +110
-40 to +150
A
W
W
oC
oC
TO-220AB
.405(10.28)
(3.1.8531)Typ .380(9.66)
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
1 23
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640 Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54) Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
TJ=25oC
TJ=110oC
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
Symbol
IDRM, IRRM
VTM
IGT
VGT
IH
dv/dt
Tgt
RθJC
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
8.0
2.2
2.2
Max
10
250
2.0
200
1.0
6.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
oC/W
Test Conditions
VAK=Rated VDRM or VRRM
RGK=1K
ITM=6A Peak
VAK=7V DC, RL=100
VAK=7V DC, RL=100
RGK=1K
RGK=1K
IGT=10mA
-


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