(PDF) RB751G-40 Datasheet - Schottky barrier diode

Número de pieza	RB751G-40
Descripción	Schottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Data Sheet Schottky barrier Diode RB751G-40 Applications General rectification Dimensions (Unit : mm) 0.6±0.05 0.13±0.03 Land size figure (Unit : mm) 0.5 Features 1) Small power mold type.(VMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 0.27±0.03 0.5±0.05 VMD2 Structure ROHM : VMD2 dot (year week factory) Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 0.76±0.1 4±0.1 2±0.05 φ0.5 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C 0.3 0.65±0.05 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current VF - - 0.37 IR - - 0.5 Capacitance between terminals Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 1 page

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PDF RB751G-40 Data sheet ( Hoja de datos )