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PDF GA200SA60SP Data sheet ( Hoja de datos )
| Número de pieza | GA200SA60SP | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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Bulletin I27235 07/06
INSULATEDGATEBIPOLARTRANSISTOR
GA200SA60SP
Standard Speed IGBT
Features
• Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package ( 2,500 volt AC)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline
• UL pending
• Totally Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 100A
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy e
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
SOT-227
Max.
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Thermal Resistance
RθJC
RθCS
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
www.irf.com
Typ.
–––
0.05
30
Max.
0.20
–––
–––
Units
V
A
V
mJ
V
W
°C
Units
°C/W
gm
1
1 page  
30000
24000
18000
VCGieEs
=
=
0V,
Cge
+
f = 1MHz
Cgc , Cce
SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
12000
6000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA200SA60SP
20 VCC = 400V
I C = 10100AA
16
12
8
4
0
0 200 400 600 800
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25 VCC = 480V
24
VGE
TJ
=
=
15V
25 °C
IC = 200A
23
22
21
20
19
18
0
10 20 30 40
RG , Gate Resistance (O(hmΩ) )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1000 RGG ==2O.0hΩm
VGE = 15V
VCC = 480V
100
IC = 345000AA
IC = 200A
IC = 100A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GA200SA60SP.PDF ] | |
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