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Teilenummer | RB085T-40 |
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Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 4 Seiten www.DataSheet4U.com
Diodes
Schottky barrier diode
RB085T-40
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
9.9
0.8
10.0
10.0±0.3
0.1
7.0±0.3
0.1
4.5±0.3
0.1
2.8±0.2
1 .1 0.1
φ3.1±0.1
φ1.2
7.2
①
1.2
1.3
0.8
(1) (2) (3)
2.54±0.5 2.54±0.5
0.7±0.015
7.0
2.6±0.03
0.8
3-φ1.2
ROHM : TO220FN
① Manufacture date
7.2
RB085T-40
zStructure
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
Storage temperature
(*1)Tc=100℃max. Per chip : Io/2
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
45
40
10
100
150
-40 to +150
Unit
V
V
A
A
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.55
IR - - 200
θjc - - 2.5
Unit
V
µA
℃/W
Conditions
IF=5A
VR=40V
junction to case
Rev.A
1/3
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB085T-40 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RB085T-40 | Schottky barrier diode | ROHM Semiconductor |
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