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Número de pieza DC9018
Descripción TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC9018
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating
30
15
5
50
10
400
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 30
Collector-Emitter Breakdown Voltage BVCEO 15
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
ICBO
VCE(sat)
hFE
-
-
28
Transition Frequency
fT 700
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
1100
1.3
Max
-
-
-
50
0.5
270
-
1.7
Unit
V
V
V
nA
V
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=12V
IC=10mA, IB=1mA
IC=1mA, VCE=5V
IC=5mA, VCE=5V
VCB=10V, IE=0
Classification of hFE
Rank
D
E
Range
28~45
39~60
F
54~80
G
72~108
H
97~146
I
132~198
J
180~270

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