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PDF 3N60 Data sheet ( Hoja de datos )

Número de pieza 3N60
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
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No Preview Available ! 3N60 Hoja de datos, Descripción, Manual

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UNISONIC TECHNOLOGIES CO., LTD
3N60
3 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3N60 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) = 3.6@VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO-220
*Pb-free plating product number: 3N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
3N60-x-TA3-T
3N60L-x-TA3-T
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
3N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
(1) T: Tube
(2) TA3: TO-220
(3) A: 600V, B: 650V
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
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3N60 pdf
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width 1 s
Duty Factor 0.1%
RL
VDD
D.U.T.
VDS 90%
10%
VGS
tD(ON )
tR
Power MOSFET
tD (OFF)
tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
50k as D.U.T.
12V
0.2 F
0.3 F
10V
QG
VGS
VDS
QGS
QGD
3mA
DUT
VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L
BVDSS
10V
RD
tp
D.U.T.
VDD
IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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