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Número de pieza | RES100N03 | |
Descripción | Switching | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RES100N03 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Transistors
Switching (30V, 10A)
RES100N03
RES100N03
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5) (4)
(8) (1)
36..90−+−+00.1.35
0.15
1.5−+0.1
0.5−+0.1
ROHM : SOP8
Each lead has same dimensions
(4)
∗
(1) (2) (3)
∗Gate Protection Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed
ID
IDP ∗
Reverse Drain
Current
Continuous
Pulsed
IDR
IDRP∗
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation (TC=25°C)
Is
Isp ∗
PD
Channel Temperature
Tch
Storage Temperature
∗PW≤10µs, Duty cycle≤1%
Tstg
Limits
30
±20
10
40
10
40
1.3
5.2
2
150
−55~+150
Unit
V
V
A
A
A
A
A
A
W
°C
°C
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RES100N03.PDF ] |
Número de pieza | Descripción | Fabricantes |
RES100N03 | Switching | ROHM Semiconductor |
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