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GMBTA06 Schematic ( PDF Datasheet ) - GTM

Teilenummer GMBTA06
Beschreibung NPN EPITAXIAL PLANAR TRANSISTOR
Hersteller GTM
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Gesamt 2 Seiten
GMBTA06 Datasheet, Funktion
G M B TA0 6
NPN SILICON TRANSISTOR
Description
The GMBTA06 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
www.DataSheet4U.com Collector to Base Voltage
Tstg
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation(Note1)
PD
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Ratings
+150
-55~+150
80
80
4
500
350
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
80 -
BVCEO
80 -
BVEBO
4-
ICBO
--
ICEO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
50 -
*hFE2
50 -
fT 100 -
,unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=100uA, IC=0
100 nA VCB=80V, IE=0
100 nA VCE=80V, IB=0
250 mV IC=100mA, IB=10mA
1.2 V VCE=1V, IC=100mA
- VCE=1V, IC=10mA
- VCE=1V, IC=100mA
- MHz VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GMBTA06
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