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Teilenummer | CDBUR0245 |
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Beschreibung | SMD Schottky Barrier Diode | |
Hersteller | Comchip Technology | |
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Gesamt 2 Seiten SMD Schottky Barrier Diode
CDBUR0245(RoHs Device)
Io = 200 mA
VR = 45 Volts
SMD Diodes Specialist
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current( IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
www.DataSheet4U.com
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
IO 200 mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
2000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
150
+125
+125
mW
OC
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Forward voltage
IF = 200 mA DC
Reverse current
VR = 10 V
Capacitance between terminals f = 1 MHZ, and 10VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 1 uA
CT 9 PF
QW-A1072
REV:A
Page 1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CDBUR0245 Schematic.PDF ] |
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