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PDF RD06HHF1 Data sheet ( Hoja de datos )
| Número de pieza | RD06HHF1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
1.2+/-0.4
123
0.8+0.10/-0.15
2.5 2.5
5deg
ABSOLUTE MAXIMUM RATINGS
(Tc=25www.DataSheet4U.com
°C
UNLESS
OTHERWISE
NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input power
ID Drain current
Zg=Zl=50Ω
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
9.5MAX
RATINGS UNIT
50 V
+/- 20
V
27.8 W
0.3 W
3A
150 °C
-40 to +150 °C
4.5 °C/W
0.5+0.10/-0.15
PIN
1.Gate
2.Source
3.Drain
UNIT:mm
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
VDD=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 10
- -1
1.9 - 4.9
6 10 -
55 65
-
No destroy
UNIT
uA
uA
V
W
%
-
RD06HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=50ohm
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f
(MHz)
30
Zin
(ohm)
65.06-j150.9
Zout
(ohm)
8.75-j4.92
Conditions
Po=10W,
Vdd=12.5V,Pin=0.15W
RD06HHF1
MITSUBISHI ELECTRIC
5/7
REV.5 2 APRIL. 2004
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RD06HHF1.PDF ] | |
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