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PDF RA30H3340M Data sheet ( Hoja de datos )
| Número de pieza | RA30H3340M | |
| Descripción | RF MOSFET MODULE | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RA30H3340M (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA30H3340M
330-400MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66www.DataSheet4U.com x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA30H3340M-E01
RA30H3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H3340M
MITSUBISHI ELECTRIC
1/9
2 Dec 2002
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING (mm)
3.0 ±0.3
7.25 ±0.8
66.0 ±0.5
60.0 ±0.5
51.5 ±0.5
MITSUBISHI RF POWER MODULE
RA30H3340M
2-R2 ±0.5
12
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
5
34
Ø0.45 ±0.15
RA30H3340M
(50.4)
MITSUBISHI ELECTRIC
5/9
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
2 Dec 2002
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RA30H3340M.PDF ] | |
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