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Teilenummer | PD55015-E |
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Beschreibung | LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs | |
Hersteller | STMicroelectronics | |
Logo | ||
Gesamt 27 Seiten PD55015-E
PD55015S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15W with 14dB gain @ 500MHz / 12.5V
■ New RF plastic package
Description
www.DataSheet4U.com
The PD55015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55015 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD55015’s superior linearity performance makes
it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD55015-E
PD55015S-E
PD55015TR-E
PD55015STR-E
August 2006
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Rev 1
Packing
Tube
Tube
Tape and reel
Tape and reel
1/27
www.st.com
27
Typical performance
4 Typical performance
PD55015-E, PD55015S-E
Figure 2.
C (pF)
1000
Capacitance vs drain voltage
100 C is s
Coss
10
1
0
f=1 M Hz
5
10 15
VDS (V)
20
C rss
25 30
Figure 4. Gate-source voltage vs
case temperature
Figure 3. Drain current vs gate voltage
4
3.5
3
2.5
2
1.5
1
0.5
0
2.5
VDS = 10 V
3 3.5 4 4.5
Vgs, GATE-SOURCE VOLTAGE (V)
5
1.04
1.02
1
0.98
0.96
-25
VDS = 10 V
ID = 3A
ID = 2A
ID = 1.5 A
ID = 1A
ID = .25 A
0 25 50
Tc, CASE TEMPERATURE (°C)
75
PD55015
Figure 5. Output power vs input power
Figure 6. Power gain vs output power
18
16
14
12
10
8
6
4
2
0
0
480 MHz
500 MHz
520 MHz
VDD = 12..5 V
IDQ = 150 mA
0.2 0.4 0.6 0.8
Pin, INPUT POWER (W)
1
18
16
480 MHz
14
500 MHz
520 MHz
12
Vdd = 12.5 V
Idq = 150 mA
10
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
6/27
6 Page Test circuit
5 Test circuit
Figure 26. Test circuit schematic
PD55015-E, PD55015S-E
Table 6. Test circuit component part list
Component
Description
B1,B2
FERRITE BEAD - Fair-rite Corp #2743021447
C1,C12
300 pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C11,C12,C13 1 to 20 pF TRIMMER CAPACITOR
C6, C18
C9, C15
C8, C16
120 pF 100 mil CHIP CAPACITOR
10 µF, 50 V ELECTROLYTIC CAPACITOR
0.1 mF, 100 mil CHIP CAP
C7, C17
1.000 pF 100 mil CHIP CAP
C5, C10
L1
33 pF, 100 mil CHIP CAP
56 nH, 6 TURNS, 18 AWG MAGNET WIRE, Id = .140" HAND WOUND CHOKE
N1, N2
R1
R2
R3
TYPE N FLANGE MOUNT
15 Ω, 1 W CHIP RESISTOR
1 KΩ, 1 W CHIP RESISTOR
33 KΩ, 1 W CHIP RESISTOR
12/27
12 Page | ||
Seiten | Gesamt 27 Seiten | |
PDF Download | [ PD55015-E Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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