Datenblatt-pdf.com


PD55015-E Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer PD55015-E
Beschreibung LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 27 Seiten
PD55015-E Datasheet, Funktion
PD55015-E
PD55015S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
Excellent thermal stability
Common source configuration
POUT = 15W with 14dB gain @ 500MHz / 12.5V
New RF plastic package
Description
www.DataSheet4U.com
The PD55015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55015 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD55015’s superior linearity performance makes
it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD55015-E
PD55015S-E
PD55015TR-E
PD55015STR-E
August 2006
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Rev 1
Packing
Tube
Tube
Tape and reel
Tape and reel
1/27
www.st.com
27






PD55015-E Datasheet, Funktion
Typical performance
4 Typical performance
PD55015-E, PD55015S-E
Figure 2.
C (pF)
1000
Capacitance vs drain voltage
100 C is s
Coss
10
1
0
f=1 M Hz
5
10 15
VDS (V)
20
C rss
25 30
Figure 4. Gate-source voltage vs
case temperature
Figure 3. Drain current vs gate voltage
4
3.5
3
2.5
2
1.5
1
0.5
0
2.5
VDS = 10 V
3 3.5 4 4.5
Vgs, GATE-SOURCE VOLTAGE (V)
5
1.04
1.02
1
0.98
0.96
-25
VDS = 10 V
ID = 3A
ID = 2A
ID = 1.5 A
ID = 1A
ID = .25 A
0 25 50
Tc, CASE TEMPERATURE (°C)
75
PD55015
Figure 5. Output power vs input power
Figure 6. Power gain vs output power
18
16
14
12
10
8
6
4
2
0
0
480 MHz
500 MHz
520 MHz
VDD = 12..5 V
IDQ = 150 mA
0.2 0.4 0.6 0.8
Pin, INPUT POWER (W)
1
18
16
480 MHz
14
500 MHz
520 MHz
12
Vdd = 12.5 V
Idq = 150 mA
10
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
6/27

6 Page









PD55015-E pdf, datenblatt
Test circuit
5 Test circuit
Figure 26. Test circuit schematic
PD55015-E, PD55015S-E
Table 6. Test circuit component part list
Component
Description
B1,B2
FERRITE BEAD - Fair-rite Corp #2743021447
C1,C12
300 pF, 100 mil CHIP CAPACITOR
C2,C3,C4,C11,C12,C13 1 to 20 pF TRIMMER CAPACITOR
C6, C18
C9, C15
C8, C16
120 pF 100 mil CHIP CAPACITOR
10 µF, 50 V ELECTROLYTIC CAPACITOR
0.1 mF, 100 mil CHIP CAP
C7, C17
1.000 pF 100 mil CHIP CAP
C5, C10
L1
33 pF, 100 mil CHIP CAP
56 nH, 6 TURNS, 18 AWG MAGNET WIRE, Id = .140" HAND WOUND CHOKE
N1, N2
R1
R2
R3
TYPE N FLANGE MOUNT
15 , 1 W CHIP RESISTOR
1 K, 1 W CHIP RESISTOR
33 K, 1 W CHIP RESISTOR
12/27

12 Page





SeitenGesamt 27 Seiten
PDF Download[ PD55015-E Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
PD55015-ELDMOST plastic family N-Channel enhancement-mode lateral MOSFETsSTMicroelectronics
STMicroelectronics
PD55015-PD55015SRF POWER TRANSISTORS The LdmoST Plastic FAMILYSTMicroelectronics
STMicroelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche