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Teilenummer | CDBFR43 |
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Beschreibung | (CDBFR42 / CDBFR43) SMD Schottky Barrier Diode | |
Hersteller | Comchip Technology | |
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Gesamt 2 Seiten SMD Schottky Barrier Diode
CDBFR42/43(RoHs Device)
SMD Diodes Specialist
Io = 200 mA
VR = 30 Volts
Features
Low forward Voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 30 V
RMS reverse voltage
VR(RMS)
21 V
Average forward rectified current
IO 200 mA
Repetitive peak forward current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power Dissipation
Thermal resistance junction
to ambient air
Storage temperature
IFRM
IFSM
PD
R JA
TSTG
-55
0.5 A
4A
200 mW
500 OC/W
+125 OC
Junction temperature
Tj
Electrical Characteristics (at TA=25OC unless otherwise noted)
+125 OC
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
CDBFR42/43
CDBFR42
CDBFR42
CDBFR43
CDBFR43
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
VR = 25V
1
0.4
VF 0.65 V
0.33
0.45
IR 0.5 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5 nS
QW-A1083
REV:A
Page 1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CDBFR43 Schematic.PDF ] |
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